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Proceedings Paper

Photocurrent decay transient process in a Si1-xGex/Si superlattice
Author(s): X. L. Huang; Mun Seok Jeong; O. H. Cha; J. Y. Kim; Eun-Kyung Suh; Hyung Jae Lee
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Paper Abstract

The photoelectric transient process of a 99 period Si0.823Ge0.177/Si superlattices (SL) was investigated by the photocurrent decay (PCD) method. Decay lifetimes of electron and hole in SL, Si cap and buffer layers are extracted from the transient intensity and polarity of the PCD signal. The temperature and bias dependences of lifetime exhibit the thermalization of heavy hole, the dissociation of free exciton, and the thermal activation of shallow impurity and dislocation. The thermalized hole jumps in and out of the well at low temperature and weak electric field, while it jumps or surfs over the well region by a strong electric field or at high temperature. The lifetimes of electron and hole are nearly the same in the Si cap layer, while the lifetime of hole is about one order of magnitude longer than that of electron in SL, possibly due to the quantum confinement of hole in the SL region.

Paper Details

Date Published: 8 April 1998
PDF: 8 pages
Proc. SPIE 3287, Photodetectors: Materials and Devices III, (8 April 1998); doi: 10.1117/12.304495
Show Author Affiliations
X. L. Huang, Chonbuk National Univ. (South Korea)
Mun Seok Jeong, Chonbuk National Univ. (South Korea)
O. H. Cha, Chonbuk National Univ. (South Korea)
J. Y. Kim, Chonbuk National Univ. (South Korea)
Eun-Kyung Suh, Chonbuk National Univ. (South Korea)
Hyung Jae Lee, Chonbuk National Univ. (South Korea)

Published in SPIE Proceedings Vol. 3287:
Photodetectors: Materials and Devices III
Gail J. Brown, Editor(s)

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