Share Email Print

Proceedings Paper

GaN p-i-n photodiodes with high visible-to-ultraviolet rejection ratio
Author(s): Patrick Kung; Xiaolong Zhang; Danielle Walker; Adam W. Saxler; Manijeh Razeghi
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

UV photodetectors are critical components in many applications, including UV astronomy, flame sensors, early missile threat warning and space-to-space communications. Because of the presence of strong IR radiation in these situations, the photodetectors have to be solar blind, i.e. able to detect UV radiation while not being sensitive to IR. AlxGa1-xN is a promising material system for such devices. AlxGa1-xN materials are wide bandgap semiconductors, with a direct bandgap whose corresponding wavelength can be continuously tuned from 200 to 365 nm. AlxGa1-xN materials are thus insensitive to visible and IR radiation whose wavelengths are higher than 365 nm. We have already reported the fabrication and characterization of AlxGa1-xN- based photoconductors with a cut-off wavelength tunable from 200 to 365 nm by adjusting the ternary alloy composition. Here, we present the growth and characterization of GaN p-i- n photodiodes which exhibit a visible-to-UV rejection ratio of 6 orders or magnitude. The thin films were grown by low pressure metalorganic chemical vapor deposition. Square mesa structures were fabricated using dry etching, followed by contact metallization. The spectral response, rejection ratio and transient response of these photodiodes is reported.

Paper Details

Date Published: 8 April 1998
PDF: 7 pages
Proc. SPIE 3287, Photodetectors: Materials and Devices III, (8 April 1998); doi: 10.1117/12.304484
Show Author Affiliations
Patrick Kung, Northwestern Univ. (United States)
Xiaolong Zhang, Northwestern Univ. (United States)
Danielle Walker, Northwestern Univ. (United States)
Adam W. Saxler, Northwestern Univ. and Air Force Research Lab. (United States)
Manijeh Razeghi, Northwestern Univ. (United States)

Published in SPIE Proceedings Vol. 3287:
Photodetectors: Materials and Devices III
Gail J. Brown, Editor(s)

© SPIE. Terms of Use
Back to Top