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Proceedings Paper

Megahertz bandwidth AlxGa1-xN/GaN-based p-i-n detectors
Author(s): Gary A. Smith; Michael J. Estes; Tuoc Dang; Arnel A. Salvador; Zhifang Fan; Guangyu Xu; Andrei Botchkarev; Hadis Morkoc; P. Wolf
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Paper Abstract

This paper discuses recent results of time response and spectral responsivity measurements made on AlxGa1-xN/GaN-based p-i-n UV detector with .03 < x < 0.12, where x is the aluminum concentration. AlxGa1-xN/GaN-based p-i-n detectors with response times as fast as 6 ns corresponding to greater than 26 MHz bandwidths are reported. Peak spectral responsivities of homojunction Al.03Ga.97N p-i-n UV detectors were found to be as high as 0.08 A/W at 343 nm while those of the Al.1Ga.9N/GaN p-i-ns were as high as 0.15 A/W at 360 nm. Homojunction GaN and Al.03Ga.97N as well as p-Al.1Ga.9N/i-GaN/n-GaN structures were grown on sapphire substrates by reactive molecular beam epitaxy and processed into UV detectors. These p-i-n detectors were then characterized in terms of their time response and spectral responsivity. Attempts to measure the noise of the Al.03Ga.97N homojunction p-i-ns are also discussed.

Paper Details

Date Published: 8 April 1998
PDF: 8 pages
Proc. SPIE 3287, Photodetectors: Materials and Devices III, (8 April 1998); doi: 10.1117/12.304482
Show Author Affiliations
Gary A. Smith, Air Force Research Lab. (United States)
Michael J. Estes, Air Force Research Lab. (United States)
Tuoc Dang, Air Force Research Lab. (United States)
Arnel A. Salvador, Univ. of Illinois/Urbana-Champaign (Philippines)
Zhifang Fan, Univ. of Illinois/Urbana-Champaign (United States)
Guangyu Xu, Univ. of Illinois/Urbana-Champaign (United States)
Andrei Botchkarev, Univ. of Illinois/Urbana-Champaign (United States)
Hadis Morkoc, Univ. of Illinois/Urbana-Champaign (United States)
P. Wolf, Air Force Institute of Technology (United States)

Published in SPIE Proceedings Vol. 3287:
Photodetectors: Materials and Devices III
Gail J. Brown, Editor(s)

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