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Proceedings Paper

P-type quantum well infrared photodetectors and pixelless long-wavelength infrared imaging devices
Author(s): Hui Chun Liu; L. Li; Louis B. Allard; Margaret Buchanan; Zbigniew R. Wasilewski; Gail J. Brown; Frank Szmulowicz; S. M. Hegde
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Paper Abstract

We present results on p-type quantum well IR photodetectors (QWIPs) based on GaAs substrates, and discuss issues related to the optimization of their performance. Due to the fact that a p-QWIP allows normal incidence absorption, the simplicity in device fabrication makes it interesting for implementing a pixel-less imaging device based on the integration of QWIP and light emitting diode.

Paper Details

Date Published: 8 April 1998
PDF: 6 pages
Proc. SPIE 3287, Photodetectors: Materials and Devices III, (8 April 1998); doi: 10.1117/12.304478
Show Author Affiliations
Hui Chun Liu, National Research Council (Canada)
L. Li, National Research Council (Canada)
Louis B. Allard, National Research Council (Canada)
Margaret Buchanan, National Research Council (Canada)
Zbigniew R. Wasilewski, National Research Council (Canada)
Gail J. Brown, Air Force Research Lab. (United States)
Frank Szmulowicz, Air Force Research Lab. (United States)
S. M. Hegde, Air Force Research Lab. (United States)


Published in SPIE Proceedings Vol. 3287:
Photodetectors: Materials and Devices III
Gail J. Brown, Editor(s)

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