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Proceedings Paper

InAs/Ga1-xInxSb infrared superlattice photodiodes for infrared detection
Author(s): Frank Fuchs; U. Weimar; E. Ahlswede; Wilfried Pletschen; J. Schmitz; Martin Walther
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Paper Abstract

Electric and optical properties of IR photodiodes based on InAs/(GaIn)Sb superlattices were investigations. Mesa diodes were fabricated with cut-off wavelengths ranging from 7.5 to 12 micrometers , showing 77 K detectivities between 1 X 1012 cmHz0.5/W and 5 X 1010 cmHz0.5/W, respectively. At least two leakage current mechanisms are observed in the reverse bias branch of the current-voltage characteristics. At high reverse bias band-to-band tunneling currents dominate. Close to zero voltage surface leakage currents become important. The leakage currents are studied with gate controlled mesa diodes, allowing depletion or inversion of the mesa side walls. In addition, the band-to- band tunneling currents are investigated by applying magnetic fields oriented parallel and perpendicular to the electric field across the p-n junction of the diode.

Paper Details

Date Published: 8 April 1998
PDF: 8 pages
Proc. SPIE 3287, Photodetectors: Materials and Devices III, (8 April 1998); doi: 10.1117/12.304477
Show Author Affiliations
Frank Fuchs, Fraunhofer-Institut fuer Angewandte Festkoerperphysik (Germany)
U. Weimar, Fraunhofer-Institut fuer Angewandte Festkoerperphysik (Germany)
E. Ahlswede, Fraunhofer-Institut fuer Angewandte Festkoerperphysik (Germany)
Wilfried Pletschen, Fraunhofer-Institut fuer Angewandte Festkoerperphysik (Germany)
J. Schmitz, Fraunhofer-Institut fuer Angewandte Festkoerperphysik (Germany)
Martin Walther, Fraunhofer-Institut fuer Angewandte Festkoerperphysik (Germany)


Published in SPIE Proceedings Vol. 3287:
Photodetectors: Materials and Devices III
Gail J. Brown, Editor(s)

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