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Proceedings Paper

Silicon JFETs for cryogenic applications
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Paper Abstract

A process for fabrication of low-frequency, low-noise, low- power silicon JFETs for cryogenic operation has been developed. COmmercially available silicon JFETs exhibit very high low frequency and 1/f noise at liquid nitrogen temperature. We report on process optimization and effect of high temperature oxidation and drive-in process on noise performance of these devices. These silicon JFETs were designed for operation at 77K. In this paper, we report the noise performance and its relation to the well-known complex oxygen-vacancy. A center that has a trap level of 0.18 eV below the conduction band. These devices were developed for use in the photo-diode assembly of NASAs Gravity Probe B mission telescope.

Paper Details

Date Published: 8 April 1998
PDF: 4 pages
Proc. SPIE 3287, Photodetectors: Materials and Devices III, (8 April 1998); doi: 10.1117/12.304475
Show Author Affiliations
Naresh C. Das, Hughes STX (United States)
Sachidananda Babu, Ball Aerospace & Technologies Corp. (United States)
Murzy D. Jhabvala, NASA Goddard Space Flight Ctr. (United States)


Published in SPIE Proceedings Vol. 3287:
Photodetectors: Materials and Devices III
Gail J. Brown, Editor(s)

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