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Proceedings Paper

Responsivity and noise performance of InGaAs/InP quantum well infrared photodetectors
Author(s): Christopher Louis Jelen; Steven Slivken; Thibaut David; Gail J. Brown; Manijeh Razeghi
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Paper Abstract

Dark current nose measurements were carried out between 10 and 104 Hz at T equals 80K on two InGaAs/InP quantum well IR photo detectors (QWIPs) designed for 8 micrometers IR detection. Using the measured noise data, we have calculated the thermal generation rate, bias-dependent gain, electron trapping probability, and electron diffusion length. The calculated thermal generation rate is similar to AlGaAs/GaAs QWIPs with similar peak wavelengths, but the gain is 50 X larger, indicating improved transport and carrier lifetime are obtained in the binary InP barriers. As a result, a large responsivity of 7.5 A/W at 5V bias and detectivity of 5 X 10$_11) cm (root) Hz/W at 1.2 V bias were measured for the InGaAs/InP QWIPs at T equals 80K.

Paper Details

Date Published: 8 April 1998
PDF: 9 pages
Proc. SPIE 3287, Photodetectors: Materials and Devices III, (8 April 1998); doi: 10.1117/12.304470
Show Author Affiliations
Christopher Louis Jelen, Northwestern Univ. (United States)
Steven Slivken, Northwestern Univ. (United States)
Thibaut David, Northwestern Univ. (United States)
Gail J. Brown, Air Force Research Lab. (United States)
Manijeh Razeghi, Northwestern Univ. (United States)


Published in SPIE Proceedings Vol. 3287:
Photodetectors: Materials and Devices III
Gail J. Brown, Editor(s)

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