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Proceedings Paper

Narrow-gap semiconductor photodiodes
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Paper Abstract

At present efforts in IR detector research are directed towards improving the performance of single element devices and large electronically scanned arrays, and to obtain higher operating temperature of detectors. Another important aim is to make IR detectors cheaper and more convenient to use. Investigations of the performance of narrow gap semiconductor photodiodes are presented. Recent progress in different IR photodiode technologies is discussed: HgCdTe photodiodes, InSb photodiodes, alternative to HgCdTe III-V and II-VI ternary alloy photodiodes, and monolithic lead chalcogenide photodiodes. Investigations of the performance of photodiodes operated at short wavelength IR, 1-3 $mUm; medium wavelength IR, 3-5 micrometers ; and long wavelength IR, 8- 14 micrometers ; are presented. The operating temperature for HgCdTe detectors is higher than for other types of photon detectors. HgCdTe detectors with background limited performance operate with thermoelectric coolers in the medium wavelength range, instead the long wavelength detectors operate at approximately equals 100 K. HgCdTe is characterized by high absorption coefficient and quantum efficiency and relatively low thermal generation rate compared to other detectors.

Paper Details

Date Published: 8 April 1998
PDF: 12 pages
Proc. SPIE 3287, Photodetectors: Materials and Devices III, (8 April 1998); doi: 10.1117/12.304467
Show Author Affiliations
Antoni Rogalski, Military Univ. of Technology (Poland)
Manijeh Razeghi, Northwestern Univ. (United States)

Published in SPIE Proceedings Vol. 3287:
Photodetectors: Materials and Devices III
Gail J. Brown, Editor(s)

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