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Proceedings Paper

Modulated-cap thin p-clad antiguided array lasers
Author(s): Jeong Seok O; Peter S. Zory; Carl F. Miester; John Yoon; Mark A. Emanuel; Verry Sperry; Bradley D. Schwartz; Richard S. Setzko
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Paper Abstract

Antiguided array lasers were fabricated in thin p-clad, InGaAs/GaAs single quantum well material. The required lateral refractive index variation was achieved by precisely modulating the thickness of the GaAs cap layer using a novel pulsed anodization/etching technique. Edge emitting arrays have 5 lasers on 9.5 micrometer centers with 6 micrometer wide gain regions and arrays having 20 lasers on 7 micrometer centers with 5 micrometer wide gain regions were characterized. At 1.2 times the pulsed current threshold (Ith), the central lobe of the lateral far field of the 5 element arrays contained about 55% of the beam power and were nearly diffraction limited (FWHM equals 1.3 degrees). At 1.2 Ith, the central lobe of the 20 element arrays contained about 75% of the beam power and were about twice the diffraction limit (FWHM) equals 0.8 degrees). At 10 Ith, the central lobe of the 20 element arrays contained about 60% of the beam power and were about 1.6 degrees wide.

Paper Details

Date Published: 7 April 1998
PDF: 5 pages
Proc. SPIE 3284, In-Plane Semiconductor Lasers: from Ultraviolet to Mid-Infrared II, (7 April 1998); doi: 10.1117/12.304464
Show Author Affiliations
Jeong Seok O, Univ. of Florida (United States)
Peter S. Zory, Univ. of Florida (United States)
Carl F. Miester, Univ. of Florida (United States)
John Yoon, Univ. of Florida (United States)
Mark A. Emanuel, Lawrence Livermore National Lab. (United States)
Verry Sperry, Lawrence Livermore National Lab. (United States)
Bradley D. Schwartz, Hughes Danbury Optical Systems, Inc. (United States)
Richard S. Setzko, Hughes Danbury Optical Systems, Inc. (United States)


Published in SPIE Proceedings Vol. 3284:
In-Plane Semiconductor Lasers: from Ultraviolet to Mid-Infrared II
Hong K. Choi; Peter S. Zory, Editor(s)

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