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Proceedings Paper

Continuous-wave room-temperature operation of InGaN/GaN multiquantum well lasers grown by low-pressure metalorganic chemical vapor deposition
Author(s): Manijeh Razeghi; Adam W. Saxler; Patrick Kung; Danielle Walker; Xiaolong Zhang; Adam Rybaltowski; Y. Xiao; Hyuk Jong Yi; Jacqueline E. Diaz
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Paper Abstract

Continuous-wave (CW) room temperature operation of InGaN/GaN multi-quantum well (MQW) lasers is reported. Far-field beam divergence as narrow as 13 degrees and 20 degrees for parallel and perpendicular directions to epilayer planes were measured, respectively. The MQW lasers showed strong beam polarization anisotropy as consistent with QW laser gain theory. Dependencies of threshold current on cavity-length and temperature are also consistent with conventional laser theory. No significant degradation in laser characteristics was observed during lifetime testing for over 140 hours of CW room temperature operation.

Paper Details

Date Published: 7 April 1998
PDF: 9 pages
Proc. SPIE 3284, In-Plane Semiconductor Lasers: from Ultraviolet to Mid-Infrared II, (7 April 1998); doi: 10.1117/12.304463
Show Author Affiliations
Manijeh Razeghi, Northwestern Univ. (United States)
Adam W. Saxler, Northwestern Univ. (United States)
Patrick Kung, Northwestern Univ. (United States)
Danielle Walker, Northwestern Univ. (United States)
Xiaolong Zhang, Northwestern Univ. (United States)
Adam Rybaltowski, Univ. of Warsaw (United States)
Y. Xiao, Northwestern Univ. (United States)
Hyuk Jong Yi, Northwestern Univ. (United States)
Jacqueline E. Diaz, Northwestern Univ. (United States)

Published in SPIE Proceedings Vol. 3284:
In-Plane Semiconductor Lasers: from Ultraviolet to Mid-Infrared II
Hong K. Choi; Peter S. Zory, Editor(s)

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