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Proceedings Paper

InGaN/GaN double heterostructure laser with cleaved facets
Author(s): Dean A. Stocker; E. Fred Schubert; W. Grieshaber; Karim S. Boutros; J. S. Flynn; Robert P. Vaudo; V. M. Phanse; Joan Marie Redwing
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Paper Abstract

Laser action is demonstrated in InGaN/GaN double heterostructures with cleaved facets. Hydride vapor phase epitaxy is used to grow a 10-micrometer-thick buffer layer of GaN on (0001) sapphire, and metal-organic vapor phase epitaxy is used to subsequently grow a GaN/In0.09Ga0.91N/GaN double heterostructure. One-mm-long cavities are produced by cleaving the structure along the (1010) plane of the sapphire substrate. A pulsed Nitrogen laser is used for optical excitation. At room temperature, the laser threshold occurs at an incident power density of 1.3 MW/cm2. Above threshold, the differential quantum efficiency increases by a factor of 34, the emission linewidth decreases to 13.5 meV, and the output becomes highly TE polarized.

Paper Details

Date Published: 7 April 1998
PDF: 6 pages
Proc. SPIE 3284, In-Plane Semiconductor Lasers: from Ultraviolet to Mid-Infrared II, (7 April 1998); doi: 10.1117/12.304461
Show Author Affiliations
Dean A. Stocker, Boston Univ. (United States)
E. Fred Schubert, Boston Univ. (United States)
W. Grieshaber, Boston Univ. (United States)
Karim S. Boutros, Advanced Technology Materials, Inc. (United States)
J. S. Flynn, Advanced Technology Materials, Inc. (United States)
Robert P. Vaudo, Advanced Technology Materials, Inc. (United States)
V. M. Phanse, Advanced Technology Materials, Inc. (United States)
Joan Marie Redwing, Advanced Technology Materials, Inc. (United States)


Published in SPIE Proceedings Vol. 3284:
In-Plane Semiconductor Lasers: from Ultraviolet to Mid-Infrared II
Hong K. Choi; Peter S. Zory, Editor(s)

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