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Proceedings Paper

Modeling of gain for lasers based on CdSe planar QD system in ZnMgSSe matrix
Author(s): Aleksey D. Andreev
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Paper Abstract

Gain in heterostructures with CdSe quantum dots (QDs) in ZnMgSSe matrix has been studied theoretically taking account of many-body effects. Three-dimensional strain distribution in the QD structure has been calculated employing Green's function method for anisotropic crystals of cubic symmetry. An analytical formula in form of the Fourier series has been obtained for the spatial dependence of the strain tensor in periodical array of disk-like planar QDs. The carrier spectrum and wave functions have been calculated taking account of actual 3D potential modified by strain effects. It is demonstrated that in wide range of structure parameters the carriers in QD-system are weakly localized. Gain spectrum is shown to be strongly modified by many-body effects. The calculated value of the carrier-induced enhancement of the refractive index is in a good agreement with available experimental data.

Paper Details

Date Published: 7 April 1998
PDF: 11 pages
Proc. SPIE 3284, In-Plane Semiconductor Lasers: from Ultraviolet to Mid-Infrared II, (7 April 1998); doi: 10.1117/12.304460
Show Author Affiliations
Aleksey D. Andreev, A.F. Ioffe Physical-Technical Institute (United Kingdom)


Published in SPIE Proceedings Vol. 3284:
In-Plane Semiconductor Lasers: from Ultraviolet to Mid-Infrared II
Hong K. Choi; Peter S. Zory, Editor(s)

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