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Proceedings Paper

Inapplicability of a simply parameterized threshold current in Sb-based IR lasers
Author(s): Christoph H. Grein; Michael E. Flatte; Henry Ehrenreich
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Paper Abstract

We examine theoretically the influence of temperature and composition on the threshold current densities of mid-wave infrared lasers with active regions consisting of InAs/InGaSb superlattices. Temperature shifts of the bands may result in significant variations in intersubband absorption and Auger recombination rates, giving rise to a threshold current density that is not well parameterized by a characteristic temperature T0. Superlattices that are optimized to have minimal threshold current densities are shown to require plus or minus 3.5 angstrom accuracy in InGaSb layer thicknesses, and plus or minus 0.25 angstrom accuracy in InAs layer thickness in order to retain optimum operating characteristics.

Paper Details

Date Published: 7 April 1998
PDF: 7 pages
Proc. SPIE 3284, In-Plane Semiconductor Lasers: from Ultraviolet to Mid-Infrared II, (7 April 1998); doi: 10.1117/12.304459
Show Author Affiliations
Christoph H. Grein, Univ. of Illinois/Chicago (United States)
Michael E. Flatte, Univ. of Iowa (United States)
Henry Ehrenreich, Harvard Univ. (United States)


Published in SPIE Proceedings Vol. 3284:
In-Plane Semiconductor Lasers: from Ultraviolet to Mid-Infrared II
Hong K. Choi; Peter S. Zory, Editor(s)

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