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Proceedings Paper

High-power optically pumped type-II quantum well lasers
Author(s): Donald L. McDaniel; Charles E. Moeller; Michael Falcon; Stefan J. Murry; C.H. Thompson Lin; Rui Q. Yang; Shin Shem Pei; Donald M. Gianardi; Chi Yan; Andrew P. Ongstad
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Paper Abstract

Stimulated emission in InAs/InGaSb/InAs/AlSb type-II quantum- well (QW) lasers was observed up to room temperature at 4.5 micrometer, optically pumped by a pulsed 2-micrometer Tm:YAG laser. The absorbed threshold peak pump intensity was only 1.1 kW/cm2 at 300 K, with a characteristic temperature T0 of 61.6 K for temperatures up to 300 K. We have also studied another type-II QW laser using 0.808-micrometer pumping sources with a much longer pulse length of 50 microseconds. The devices demonstrated a maximum output power of 1.6 W per facet at 83 K, with a corresponding differential external quantum efficiency of 24.8%.

Paper Details

Date Published: 7 April 1998
PDF: 9 pages
Proc. SPIE 3284, In-Plane Semiconductor Lasers: from Ultraviolet to Mid-Infrared II, (7 April 1998); doi: 10.1117/12.304458
Show Author Affiliations
Donald L. McDaniel, Air Force Research Lab. (United States)
Charles E. Moeller, Air Force Research Lab. (United States)
Michael Falcon, Air Force Research Lab. (United States)
Stefan J. Murry, Univ. of Houston (United States)
C.H. Thompson Lin, Univ. of Houston (United States)
Rui Q. Yang, Univ. of Houston (United States)
Shin Shem Pei, Univ. of Houston (United States)
Donald M. Gianardi, Boeing Defense & Space Group (United States)
Chi Yan, Boeing Defense & Space Group (United States)
Andrew P. Ongstad, Boeing Defense & Space Group (United States)


Published in SPIE Proceedings Vol. 3284:
In-Plane Semiconductor Lasers: from Ultraviolet to Mid-Infrared II
Hong K. Choi; Peter S. Zory, Editor(s)

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