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Proceedings Paper

Determination of carrier lifetimes using Hakki-Paoli gain data
Author(s): Andrew P. Ongstad; Gregory C. Dente; Michael L. Tilton; Jonathan Stohs; David J. Gallant
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Paper Abstract

This paper presents a technique for determining carrier lifetimes which does not require a fast detector or rely on an experimentally complex implementation. The technique is based both on a measurement and a parallel calculation: (1) A Hakki- Paoli measurement of modal gain versus current density, g(J), and (2) A theoretical determination of the modal gain versus carrier sheet density, g(N). Once the gain relationships have been determined, the carrier sheet density, N, can be functionally related to the current density, J, and the lifetime determined. We demonstrate this method on two InGaAs single quantum well lasers. This method may prove particularly useful for carrier lifetime estimations in long-wavelength semiconductor lasers.

Paper Details

Date Published: 7 April 1998
PDF: 7 pages
Proc. SPIE 3284, In-Plane Semiconductor Lasers: from Ultraviolet to Mid-Infrared II, (7 April 1998); doi: 10.1117/12.304457
Show Author Affiliations
Andrew P. Ongstad, Air Force Research Lab. and Boeing Defense & Space Group (United States)
Gregory C. Dente, GCD Associates (United States)
Michael L. Tilton, Air Force Research Lab. and Boeing Defense & Space Group (United States)
Jonathan Stohs, Univ. of New Mexico (United States)
David J. Gallant, Air Force Research Lab. and Boeing Defense & Space Group (United States)


Published in SPIE Proceedings Vol. 3284:
In-Plane Semiconductor Lasers: from Ultraviolet to Mid-Infrared II
Hong K. Choi; Peter S. Zory, Editor(s)

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