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Proceedings Paper

Mid-infrared interband cascade emission in InAs/GaInSb/AlSb type-II heterostructures
Author(s): Hui Chun Liu; Emmanuel Dupont; John P. McCaffrey; Margaret Buchanan; Dongxu Zhang; Rui Q. Yang; C.H. Thompson Lin; Stefan J. Murry; Shin Shem Pei
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Paper Abstract

To investigate the cascade process, we study two sets of mid- infrared InAs/GaInSb/AlSb multiple quantum well electroluminescent devices. Each set has nominally the same device parameters, differing only by the number of periods. We find, as expected, that for the same driving current the larger the device period the more intense is the emission. We also find that the scaling is far from ideal. We correlate the deviation of the exact scaling with the variation of the wafer-to-wafer structural quality.

Paper Details

Date Published: 7 April 1998
PDF: 7 pages
Proc. SPIE 3284, In-Plane Semiconductor Lasers: from Ultraviolet to Mid-Infrared II, (7 April 1998); doi: 10.1117/12.304456
Show Author Affiliations
Hui Chun Liu, National Research Council of Canada (Canada)
Emmanuel Dupont, National Research Council of Canada (Canada)
John P. McCaffrey, National Research Council of Canada (Canada)
Margaret Buchanan, National Research Council of Canada (Canada)
Dongxu Zhang, Univ. of Houston (United States)
Rui Q. Yang, Univ. of Houston (United States)
C.H. Thompson Lin, Univ. of Houston (United States)
Stefan J. Murry, Univ. of Houston (United States)
Shin Shem Pei, Univ. of Houston (United States)


Published in SPIE Proceedings Vol. 3284:
In-Plane Semiconductor Lasers: from Ultraviolet to Mid-Infrared II
Hong K. Choi; Peter S. Zory, Editor(s)

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