Share Email Print
cover

Proceedings Paper

Efficiency and power issues in Sb-based mid-infrared lasers
Author(s): Han Q. Le; George W. Turner; Juan R. Ochoa; Hong K. Choi; C.H. Thompson Lin; Rui Q. Yang; Shin Shem Pei
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Laser efficiency is an important issue for mid-IR Sb-based semiconductor lasers. It has been the key limiting factor in the efforts to develop high power lasers in recent years. This paper reviews the basic aspects of the problem and discusses some recent results. A number of factors affect the efficiency, one of which common to many materials was a high internal loss that increases rapidly versus temperature. A major contribution to this internal loss is the large intervalence band carrier absorption that occurs in all mid- to-low-gap III-V semiconductors. Recent studies of both types of Sb-based laser materials with InAs-like valence band (InAsSb) and GaSb-like valence band (InAs/GaInSb/AlSb type-II quantum wells) have showed such a strong absorption. Coupled with the thermal effects, the internal loss behavior results in an efficiency roll-off that limits the power performance. Issues for the improvement of the efficiency are discussed.

Paper Details

Date Published: 7 April 1998
PDF: 9 pages
Proc. SPIE 3284, In-Plane Semiconductor Lasers: from Ultraviolet to Mid-Infrared II, (7 April 1998); doi: 10.1117/12.304453
Show Author Affiliations
Han Q. Le, MIT Lincoln Lab. (United States)
George W. Turner, MIT Lincoln Lab. (United States)
Juan R. Ochoa, MIT Lincoln Lab. (United States)
Hong K. Choi, MIT Lincoln Lab. (United States)
C.H. Thompson Lin, Univ. of Houston (United States)
Rui Q. Yang, Univ. of Houston (United States)
Shin Shem Pei, Univ. of Houston (United States)


Published in SPIE Proceedings Vol. 3284:
In-Plane Semiconductor Lasers: from Ultraviolet to Mid-Infrared II
Hong K. Choi; Peter S. Zory, Editor(s)

© SPIE. Terms of Use
Back to Top