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Gain and threshold current density characteristics of 2-μm GaInAsSb/AlGaAsSb MQW lasers with increased valence band offset
Author(s): Tim C. Newell; Luke F. Lester; Xiaoying Wu; Yining Zhang; Allen L. Gray
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Paper Abstract

Compressively strained 2 micrometer GaInAsSb quantum well lasers with large valence band offsets and broadened waveguides display a record characteristic temperature, T0 equals 140 degrees Kelvin for a 4-QW laser and a differential efficiency of 0.74 for a pulsed 2-QW device. The T0 of these antimonide lasers is 65% more than that reported for phosphide-based lasers operating at 2 micrometer wavelength. A room-temperature threshold current density as low as 173 A/cm2 has been observed for a 2-QW device and 225 A/cm2 for the 4-QW laser.

Paper Details

Date Published: 7 April 1998
PDF: 10 pages
Proc. SPIE 3284, In-Plane Semiconductor Lasers: from Ultraviolet to Mid-Infrared II, (7 April 1998); doi: 10.1117/12.304452
Show Author Affiliations
Tim C. Newell, Univ. of New Mexico (United States)
Luke F. Lester, Univ. of New Mexico (United States)
Xiaoying Wu, Univ. of New Mexico (United States)
Yining Zhang, Univ. of New Mexico (United States)
Allen L. Gray, U.S. Army Research Lab. (United States)


Published in SPIE Proceedings Vol. 3284:
In-Plane Semiconductor Lasers: from Ultraviolet to Mid-Infrared II
Hong K. Choi; Peter S. Zory, Editor(s)

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