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Proceedings Paper

Mid-infrared GaSb-InAs-based multiple quantum well lasers
Author(s): Alexei N. Baranov; N. Bertru; Y. Cuminal; G. Boissier; Y. Rouillard; J. C. Nicolas; P. Grech; Andre Francis Joullie; Claude L. Alibert
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Paper Abstract

We report GaInAsSb/GaSb multiple quantum well lasers with type-II band alignment operating at room temperature. Basic properties of GaInAsSb/GaSb system in presence of strains are presented. Room temperature lasing has been achieved at wavelengths up to 2.65 micrometer. For the first time, stimulated emission has been obtained from a type-III quantum well structure at room temperature at 1.98 micrometer and 2.32 micrometer for the structures with 6- and 12-angstrom-thick InAs quantum wells, respectively. Modification of the band structure near interfaces of the type-II quantum wells due to carrier injection is shown to be a decisive factor allowing to obtain low threshold lasing in quantum well structures with indirect radiative recombination.

Paper Details

Date Published: 7 April 1998
PDF: 11 pages
Proc. SPIE 3284, In-Plane Semiconductor Lasers: from Ultraviolet to Mid-Infrared II, (7 April 1998); doi: 10.1117/12.304451
Show Author Affiliations
Alexei N. Baranov, Univ. de Montpellier II (France)
N. Bertru, Univ. de Montpellier II (France)
Y. Cuminal, Univ. de Montpellier II (France)
G. Boissier, Univ. de Montpellier II (France)
Y. Rouillard, Univ. de Montpellier II (France)
J. C. Nicolas, Univ. de Montpellier II (France)
P. Grech, Univ. de Montpellier II (France)
Andre Francis Joullie, Univ. de Montpellier II (France)
Claude L. Alibert, Univ. de Montpellier II (France)


Published in SPIE Proceedings Vol. 3284:
In-Plane Semiconductor Lasers: from Ultraviolet to Mid-Infrared II
Hong K. Choi; Peter S. Zory, Editor(s)

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