Share Email Print
cover

Proceedings Paper

Buried heterostructure quantum cascade lasers
Author(s): Mattias Beck; Jerome Faist; Claire F. Gmachl; Federico Capasso; Deborah L. Sivco; James N. Baillargeon; Alfred Y. Cho
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

We report on the fabrication and characterization of buried heterostructure quantum cascade (BH-QC) lasers. The buried heterostructure is formed by regrowth of InP lateral on the side walls and on top of the InAlAs/InGaAs laser structure by molecular beam epitaxy (MBE) after in situ surface cleaning. Thermal Cl2 etching is applied to the etched laser structure to remove the native oxides of the ternaries prior to regrowth of InP. Buried heterostructure QC lasers demonstrated excellent performances with lower threshold current densities (as low as 4.5kA/cm2 at T equals 300K) and higher slope efficiencies that we attribute to lower waveguide losses and a better heat dissipation.

Paper Details

Date Published: 7 April 1998
PDF: 6 pages
Proc. SPIE 3284, In-Plane Semiconductor Lasers: from Ultraviolet to Mid-Infrared II, (7 April 1998); doi: 10.1117/12.304449
Show Author Affiliations
Mattias Beck, Lucent Technologies/Bell Labs. (Switzerland)
Jerome Faist, Lucent Technologies/Bell Labs. (Switzerland)
Claire F. Gmachl, Lucent Technologies/Bell Labs. (United States)
Federico Capasso, Lucent Technologies/Bell Labs. (United States)
Deborah L. Sivco, Lucent Technologies/Bell Labs. (United States)
James N. Baillargeon, Lucent Technologies/Bell Labs. (United States)
Alfred Y. Cho, Lucent Technologies/Bell Labs. (United States)


Published in SPIE Proceedings Vol. 3284:
In-Plane Semiconductor Lasers: from Ultraviolet to Mid-Infrared II
Hong K. Choi; Peter S. Zory, Editor(s)

© SPIE. Terms of Use
Back to Top