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Proceedings Paper

GaInNAs/GaAs long-wavelength lasers
Author(s): Masahiko Kondow; Takeshi Kitatani; Michael C. Larson; Kouji Nakahara; Kazuhisa Uomi; Hiroaki Inoue
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Paper Abstract

In this paper, we fully review our recent progress in GaInNAs/GaAs long-wavelength lasers. An excellent characteristic temperature was confirmed for the GaInNAs laser diodes with a 1.2-micrometer wavelength. A record high value (T0 equals 126 K) was obtained in the temperature range from 25 to 85 degrees Celsius. We have also succeeded in applying GaInNAs to long-wavelength laser didoes that lased under room-temperature continuous-wave operation in the 1.3- micrometer wavelength range suitable for optical fiber communications. The temperature dependence of the lasing wavelength was as low as 0.35 nm/degrees Celsius. Thus, we have experimentally demonstrated that the GaInNAs laser diodes are very promising for application in optical fiber communications to overcome the poor temperature behavior of the conventional InGaAsP-based long-wavelength lasers.

Paper Details

Date Published: 7 April 1998
PDF: 8 pages
Proc. SPIE 3284, In-Plane Semiconductor Lasers: from Ultraviolet to Mid-Infrared II, (7 April 1998); doi: 10.1117/12.304445
Show Author Affiliations
Masahiko Kondow, Hitachi, Ltd. (Japan)
Takeshi Kitatani, Hitachi, Ltd. (Japan)
Michael C. Larson, Hitachi, Ltd. (Japan)
Kouji Nakahara, Hitachi, Ltd. (Japan)
Kazuhisa Uomi, Hitachi, Ltd. (Japan)
Hiroaki Inoue, Hitachi, Ltd. (United States)


Published in SPIE Proceedings Vol. 3284:
In-Plane Semiconductor Lasers: from Ultraviolet to Mid-Infrared II
Hong K. Choi; Peter S. Zory, Editor(s)

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