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Proceedings Paper

III-N-V: a novel material system for lasers with good high-temperature characteristics
Author(s): Charles W. Tu; W. G. Bi; H. P. Xin; Yong Ma; Jianping Zhang; Liwei Wang; Seng Tiong Ho
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Paper Abstract

We have obtained GaInNAs/GaAs quantum wells with emission at 1.3 micrometer at room temperature. We also show that another novel material InNAsP grown on InP is a viable material for long-wavelength lasers. The maximum temperature of operation for an InNAsP/GaInAsP microdisk laser is 70 degrees Celsius, which is about 120 degrees Celsius higher than that of a similar laser fabricated from GaInAs/GaInAsP. The characteristic temperature To of the former is 97 K, also higher than that of the latter.

Paper Details

Date Published: 7 April 1998
PDF: 7 pages
Proc. SPIE 3284, In-Plane Semiconductor Lasers: from Ultraviolet to Mid-Infrared II, (7 April 1998); doi: 10.1117/12.304444
Show Author Affiliations
Charles W. Tu, Univ. of California/San Diego (United States)
W. G. Bi, Univ. of California/San Diego (United States)
H. P. Xin, Univ. of California/San Diego (United States)
Yong Ma, Northwestern Univ. (United States)
Jianping Zhang, Northwestern Univ. (United States)
Liwei Wang, Northwestern Univ. (United States)
Seng Tiong Ho, Northwestern Univ. (United States)


Published in SPIE Proceedings Vol. 3284:
In-Plane Semiconductor Lasers: from Ultraviolet to Mid-Infrared II
Hong K. Choi; Peter S. Zory, Editor(s)

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