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Proceedings Paper

1.3-um InP-based n-type modulation-doped strained multiquantum well lasers for high-density parallel optical interconnections
Author(s): Kouji Nakahara; Tomonobu Tsuchiya; A. Niwa; Kazuhisa Uomi; T. Haga; T. Taniwatari; T. Toyonaka
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Paper Abstract

The superior performance of n-type modulation doping in 1.3- micrometer InP-based strained multi quantum-well (MQW) lasers is demonstrated. Experimental results, which is in good agreement with theoretical results, confirm that the threshold current density, carrier lifetime, and internal loss in n-type modulation-doped (MD) MQW lasers is lower than those in conventional undoped MQW lasers at room and high temperatures. In addition, 2.5-Gb/s modulation under zero-bias current is achieved with the modified n-type MD-MQW laser at 85 degrees Celsius. These results confirm the suitability of this type of laser as a light source for high-density parallel optical interconnections.

Paper Details

Date Published: 7 April 1998
PDF: 8 pages
Proc. SPIE 3284, In-Plane Semiconductor Lasers: from Ultraviolet to Mid-Infrared II, (7 April 1998); doi: 10.1117/12.304440
Show Author Affiliations
Kouji Nakahara, Hitachi, Ltd. (Japan)
Tomonobu Tsuchiya, Hitachi, Ltd. (Japan)
A. Niwa, Hitachi, Ltd. (Japan)
Kazuhisa Uomi, Hitachi, Ltd. (Japan)
T. Haga, Hitachi, Ltd. (Japan)
T. Taniwatari, Hitachi, Ltd. (Japan)
T. Toyonaka, Hitachi, Ltd. (Japan)

Published in SPIE Proceedings Vol. 3284:
In-Plane Semiconductor Lasers: from Ultraviolet to Mid-Infrared II
Hong K. Choi; Peter S. Zory, Editor(s)

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