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Proceedings Paper

High-power diode lasers grown by solid-source MBE
Author(s): Markus Pessa; Marco U. Jalonen; Arto K. Salokatve; Pekka Savolainen; Mika Toivonen; Richard F. Murison; Tullio Panarello; Michael Jansen; Pat Corvini
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Paper Abstract

This paper presents the performance characteristics and reliability data of GaInAsP- and AlGaInP-based laser diodes emitting at the wavelengths from 650 to 1,300 nm. The lasers are grown by toxic-gas-free all-solid-source molecular beam epitaxy (SS-MBE).

Paper Details

Date Published: 7 April 1998
PDF: 9 pages
Proc. SPIE 3284, In-Plane Semiconductor Lasers: from Ultraviolet to Mid-Infrared II, (7 April 1998); doi: 10.1117/12.304439
Show Author Affiliations
Markus Pessa, Tampere Univ. of Technology (Finland)
Marco U. Jalonen, Tampere Univ. of Technology (Finland)
Arto K. Salokatve, Tampere Univ. of Technology (Finland)
Pekka Savolainen, Tampere Univ. of Technology (Finland)
Mika Toivonen, Tampere Univ. of Technology (Finland)
Richard F. Murison, EG&G Optoelectronics (Canada)
Tullio Panarello, EG&G Optoelectronics (Canada)
Michael Jansen, Coherent Inc. (United States)
Pat Corvini, Coherent Inc. (United States)

Published in SPIE Proceedings Vol. 3284:
In-Plane Semiconductor Lasers: from Ultraviolet to Mid-Infrared II
Hong K. Choi; Peter S. Zory, Editor(s)

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