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Proceedings Paper

Real-index-guided AlGaInP red laser with high-power characteristics grown by one-step MOVPE
Author(s): Chikashi Anayama; Akira Furuya; Toshiyuki Tanahashi
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Paper Abstract

We have developed a one-step-grown real-index-guided AlGaInP/GaInAsP red laser called a self-aligned stepped substrate (S3) laser. This S3-laser has a double- hetero structure formed on a stepped nonplanar substrate and an active layer inclined at an angle to the horizontal. The fabrication process of the laser utilizes the following two key techniques: (1) a lateral p-n junction formed during the growth of the nonplanar substrate by alternate doping with Zn and Se that have strong impurity incorporation dependencies on the substrate's orientation, and (2) a natural (411)A-like growth facet formation on the nonplanar substrate by metal organic vapor phase epitaxy (MOVPE). The real-index waveguide structure with an inclined active layer provided the laser with a stable lateral-mode and good beam characteristics (a small astigmatism and a small aspect ratio). Its optical-loss- free structure leads to a low threshold current of about 20 mA, a high quantum efficiency of about 1.2 W/A, and a high characteristic temperature of about 150K within 25 degrees Celsius to 50 degrees Celsius. A low operating current of the laser with the wavelength of 680 nm under 70 degrees Celsius, 35 mW conditions, would make it highly reliable for optical storage applications.

Paper Details

Date Published: 7 April 1998
PDF: 11 pages
Proc. SPIE 3284, In-Plane Semiconductor Lasers: from Ultraviolet to Mid-Infrared II, (7 April 1998); doi: 10.1117/12.304438
Show Author Affiliations
Chikashi Anayama, Fujitsu Labs. Ltd. (Japan)
Akira Furuya, Fujitsu Labs. Ltd. (Japan)
Toshiyuki Tanahashi, Fujitsu Labs. Ltd. (Japan)


Published in SPIE Proceedings Vol. 3284:
In-Plane Semiconductor Lasers: from Ultraviolet to Mid-Infrared II
Hong K. Choi; Peter S. Zory, Editor(s)

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