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Proceedings Paper

Characterization of AlGaInN heterostructures and laser diodes
Author(s): David P. Bour; Michael Kneissl; Noble M. Johnson; Linda T. Romano; Brent S. Krusor; Matt D. McCluskey; Werner Goetz; Ross D. Bringans
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Paper Abstract

We report on the OMVPE (organometallic vapor phase epitaxial) growth and characterization of AlGaInN heterostructures and laser diodes, including measurements of electrical properties (Hall), structural characteristics (x-ray diffraction and TEM), and room temperature, pulsed laser operation of a 10- quantum well InGaN/AlGaN heterostructure.

Paper Details

Date Published: 7 April 1998
PDF: 9 pages
Proc. SPIE 3284, In-Plane Semiconductor Lasers: from Ultraviolet to Mid-Infrared II, (7 April 1998); doi: 10.1117/12.304435
Show Author Affiliations
David P. Bour, Xerox Palo Alto Research Ctr. (United States)
Michael Kneissl, Xerox Palo Alto Research Ctr. (United States)
Noble M. Johnson, Xerox Palo Alto Research Ctr. (United States)
Linda T. Romano, Xerox Palo Alto Research Ctr. (United States)
Brent S. Krusor, Xerox Palo Alto Research Ctr. (United States)
Matt D. McCluskey, Xerox Palo Alto Research Ctr. (United States)
Werner Goetz, Hewlett-Packard Optoelectronics Div. (United States)
Ross D. Bringans, Xerox Palo Alto Research Ctr. (United States)


Published in SPIE Proceedings Vol. 3284:
In-Plane Semiconductor Lasers: from Ultraviolet to Mid-Infrared II
Hong K. Choi; Peter S. Zory, Editor(s)

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