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Proceedings Paper

InGaN/GaN lasers grown on SiC
Author(s): Kathy Doverspike; Gary E. Bulman; S. T. Sheppard; Hua-Shuang Kong; Michelle T. Leonard; Heidi Dieringer; John A. Edmond; K. L. More; Y. K. Song; M. Kuball; Arto V. Nurmikko
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Paper Abstract

Single crystal thin films with compositions from the AlN-InN- GaN system were grown via metal-organic chemical vapor deposition (MOCVD) on single crystal 6H-SiC substrates. Blue light emitting (LED) and laser diode (LD) structures were fabricated. A conducting buffer layer was developed which uses an AlGaN buffer layer which provides a conduction path between SiC and the active device region. This conducting buffer layer was utilized in both the LEDs and the LDs. The external quantum efficiency of the LEDs was 3% at 20 mA (3.6V) with a peak emission wavelength of 430 nm. Violet and blue LDs were fabricated which consisted of an 8-well InGaN/GaN multiple quantum well (MQW) active region in a separate confinement heterostructure (SCH) design. The devices lased at room temperature under pulsed and continuous wave operation with an emission wavelength of 404-435 nm. The lowest pulsed operation threshold current density obtained for lasing under was 10.4 kA/cm2.

Paper Details

Date Published: 7 April 1998
PDF: 12 pages
Proc. SPIE 3284, In-Plane Semiconductor Lasers: from Ultraviolet to Mid-Infrared II, (7 April 1998); doi: 10.1117/12.304434
Show Author Affiliations
Kathy Doverspike, Cree Research, Inc. (United States)
Gary E. Bulman, Cree Research, Inc. (United States)
S. T. Sheppard, Cree Research, Inc. (United States)
Hua-Shuang Kong, Cree Research, Inc. (United States)
Michelle T. Leonard, Cree Research, Inc. (United States)
Heidi Dieringer, Cree Research, Inc. (United States)
John A. Edmond, Cree Research, Inc. (United States)
K. L. More, Oak Ridge National Lab. (United States)
Y. K. Song, Brown Univ. (United States)
M. Kuball, Brown Univ. (United States)
Arto V. Nurmikko, Brown Univ. (United States)

Published in SPIE Proceedings Vol. 3284:
In-Plane Semiconductor Lasers: from Ultraviolet to Mid-Infrared II
Hong K. Choi; Peter S. Zory, Editor(s)

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