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Proceedings Paper

Improved beam quality for high-power tapered laser diodes with LMG (low-modal-gain) epitaxial layer structures
Author(s): Michael Mikulla; Alexis Schmitt; Pierre Chazan; A. Wetzel; Martin Walther; Rudolf Kiefer; Wilfried Pletschen; Juergen Braunstein; Guenter Weimann
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Paper Abstract

In high-power, high-brightness laser diodes, beam filamentation is one of the main physical effects that limit the device performance. Due to the interaction between the optical power and the carrier density in the active region of broad area devices, spatial hole-burning leads to an inhomogeneous optical index that causes the degradation of the optical beam profile. We show, that epitaxial layer structures with low optical confinement are much more insensitive to beam filamentation because of their reduced differential gain. Experimentally we find, that the beam quality of tapered laser oscillators can be improved by an order of magnitude, when epitaxial layer structures with reduced modal gain are used for the device fabrication. Two mm long tapered devices with a 200 micrometer wide output facet show near diffraction limited farfield profiles up to output powers of more than 2 W cw.

Paper Details

Date Published: 7 April 1998
PDF: 8 pages
Proc. SPIE 3284, In-Plane Semiconductor Lasers: from Ultraviolet to Mid-Infrared II, (7 April 1998); doi: 10.1117/12.304433
Show Author Affiliations
Michael Mikulla, Fraunhofer-Institut fuer Angewandte Festkoerperphysik (Germany)
Alexis Schmitt, Fraunhofer-Institut fuer Angewandte Festkoerperphysik (Germany)
Pierre Chazan, Fraunhofer-Institut fuer Angewandte Festkoerperphysik (Germany)
A. Wetzel, Fraunhofer-Institut fuer Angewandte Festkoerperphysik (Germany)
Martin Walther, Fraunhofer-Institut fuer Angewandte Festkoerperphysik (Germany)
Rudolf Kiefer, Fraunhofer-Institut fuer Angewandte Festkoerperphysik (Germany)
Wilfried Pletschen, Fraunhofer-Institut fuer Angewandte Festkoerperphysik (Germany)
Juergen Braunstein, Fraunhofer-Institut fuer Angewandte Festkoerperphysik (Germany)
Guenter Weimann, Fraunhofer-Institut fuer Angewandte Festkoerperphysik (Germany)


Published in SPIE Proceedings Vol. 3284:
In-Plane Semiconductor Lasers: from Ultraviolet to Mid-Infrared II
Hong K. Choi; Peter S. Zory, Editor(s)

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