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Proceedings Paper

Beam quality in multiwatt semiconductor amplifiers
Author(s): David J. Bossert; Gregory C. Dente; Michael L. Tilton
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Paper Abstract

Filamentation currently limits the amount of diffraction- limited power that can be obtained from broad-area semiconductor amplifiers. This paper examines the filamentation tendencies of a wide input-aperture tapered amplifier. Experimental measurements of filament gain under varying duty-cycle are offered and compared to theory. A numerical simulation of the device operation, which addresses non-uniform current injection, is also presented.

Paper Details

Date Published: 7 April 1998
PDF: 9 pages
Proc. SPIE 3284, In-Plane Semiconductor Lasers: from Ultraviolet to Mid-Infrared II, (7 April 1998); doi: 10.1117/12.304432
Show Author Affiliations
David J. Bossert, Air Force Research Lab. (United States)
Gregory C. Dente, GCD Associates (United States)
Michael L. Tilton, Boeing Defense & Space Group (United States)


Published in SPIE Proceedings Vol. 3284:
In-Plane Semiconductor Lasers: from Ultraviolet to Mid-Infrared II
Hong K. Choi; Peter S. Zory, Editor(s)

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