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Proceedings Paper

High-power Al-free active-region diode lasers
Author(s): Luke J. Mawst; Jerome Kent Wade; A. Al-Muhanna
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Paper Abstract

Al-free InGaAsP/InGaP/GaAs-based diode lasers in the wavelength range 730 - 980 nm have been grown by metalorganic chemical vapor deposition (MOCVD). A large transverse spot size is obtained using a Broad Waveguide (BW) design, permitting record output powers to be obtained.

Paper Details

Date Published: 7 April 1998
PDF: 9 pages
Proc. SPIE 3284, In-Plane Semiconductor Lasers: from Ultraviolet to Mid-Infrared II, (7 April 1998); doi: 10.1117/12.304431
Show Author Affiliations
Luke J. Mawst, Univ. of Wisconsin/Madison (United States)
Jerome Kent Wade, Univ. of Wisconsin/Madison (United States)
A. Al-Muhanna, Univ. of Wisconsin/Madison (United States)

Published in SPIE Proceedings Vol. 3284:
In-Plane Semiconductor Lasers: from Ultraviolet to Mid-Infrared II
Hong K. Choi; Peter S. Zory, Editor(s)

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