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Proceedings Paper

Plasma-assisted molecular beam epitaxial growth and characterization of zincblende (In,Al,Ga)N heterostructures on GaAs(001)
Author(s): Jochen R. Muellhaeuser; B. Jenichen; Achim Trampert; Matthias Wassermeier; Oliver Brandt; Klaus H. Ploog
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Paper Abstract

We report on successful growth of zincblende ((beta) ) (In,Al,Ga)N heterostructures on GaAs(001) by means of rf plasma assisted molecular beam epitaxy. The composition of the samples under investigation is analyzed by secondary ion mass spectroscopy and x-ray diffraction. Cross-sectional transmission electron microscopy is used for studying the microstructure and selected area diffraction for verifying the phase purity of the epilayers. The surface morphology is investigated by atomic force microscopy. Temperature dependent transmission, reflectance, and photoluminescence investigations allow the determination of the band gap energy of (beta) -InxGa1-xN. It is shown that by using (beta) -InxGa1-xN blue and green band-edge related emission is obtained with respectively, x equals 0.17 and x equals 0.4 in contrast to wurtzite InxGa1-xN where In contents of about x equals 0.25 and x equals 0.55 are required for achieving the respective colors.

Paper Details

Date Published: 7 April 1998
PDF: 11 pages
Proc. SPIE 3279, Light-Emitting Diodes: Research, Manufacturing, and Applications II, (7 April 1998); doi: 10.1117/12.304429
Show Author Affiliations
Jochen R. Muellhaeuser, Paul-Drude-Institut fuer Festkorperelektronik (Germany)
B. Jenichen, Paul-Drude-Institut fuer Festkorperelektronik (Germany)
Achim Trampert, Paul-Drude-Institut fuer Festkorperelektronik (Germany)
Matthias Wassermeier, Paul-Drude-Institut fuer Festkorperelektronik (Germany)
Oliver Brandt, Paul-Drude-Institut fuer Festkorperelektronik (Germany)
Klaus H. Ploog, Paul-Drude-Institut fuer Festkorperelektronik (Germany)


Published in SPIE Proceedings Vol. 3279:
Light-Emitting Diodes: Research, Manufacturing, and Applications II
E. Fred Schubert, Editor(s)

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