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Proceedings Paper

GaN-based LEDs grown by molecular beam epitaxy
Author(s): Robert Averbeck; A. Graber; H. Tews; D. Bernklau; Ulrich Barnhoefer; Henning Riechert
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Paper Abstract

We report on the growth of GaN, InGaN and GaN/InGaN/GaN pn- junctions grown on sapphire by RF-plasma assisted MBE. MBE allows us to grow high quality nitrides with growth rates around 1 micrometers /h at relatively low temperatures. Thereby p- type doping with Mg and the incorporation of In in InGaN are greatly facilitated. Device-typical n- and p-type doping levels yield room temperature mobilities of 220 cm2/Vs and 10 cm2/Vs, respectively. InGaN with In contents of more than 40 percent is readily achieved. LEDs fabricated from heterostructures with a 4 nm InGaN layer show bright blue or green electroluminescence depending on the In content. Various effects in the electroluminescence caused by fluctuations in the conduction and valence band will be discussed, the most striking one a reduction in linewidth with increasing temperature.

Paper Details

Date Published: 7 April 1998
PDF: 8 pages
Proc. SPIE 3279, Light-Emitting Diodes: Research, Manufacturing, and Applications II, (7 April 1998); doi: 10.1117/12.304427
Show Author Affiliations
Robert Averbeck, Siemens AG (Germany)
A. Graber, Univ. Giessen (Germany)
H. Tews, Siemens AG (Germany)
D. Bernklau, Siemens AG (Germany)
Ulrich Barnhoefer, Technical Univ. Munich (United States)
Henning Riechert, Siemens AG (Germany)


Published in SPIE Proceedings Vol. 3279:
Light-Emitting Diodes: Research, Manufacturing, and Applications II
E. Fred Schubert, Editor(s)

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