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Proceedings Paper

Recent advances in In(As,Sb) SLS and QW LEDs for the 3- to 10-um region
Author(s): Christopher C. Phillips; Harvey R. Hardaway; Joerg Heber; Peter Moeck; Mark J. Pullin; Patrick J.P. Tang; Peter Yuen
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Paper Abstract

InAs/In(As,Sb) heterostructure LEDs are studied in forward (FB) and reverse (RB) bias where the phenomenon of 'negative luminescence' is seen for the first time in this materials system. Pseudomorphic 300K SQW LEDs, lattice matched to InAs and emitting at λ-5 micrometers and λ-8 micrometers , have internal conversion efficiencies of > 1.3 percent and > 0.83 percent respectively and maximum outputs in excess of 50 μW, in spite of an extremely low overall epilayer Sb content. Strain-relaxed InAs/In(As,Sb) SLS LEDs with AlSb barriers for electron confinement give 300K outputs in excess of 0.1mW at λ-4.2μm, approximately 3.5 times greater than control devices without the AlSb barrier. In RB the same SLS diodes exhibited efficient negative luminescence with output powers which increase with increasing device temperature to within 0.8 of the FB figures at 320 K.

Paper Details

Date Published: 7 April 1998
PDF: 7 pages
Proc. SPIE 3279, Light-Emitting Diodes: Research, Manufacturing, and Applications II, (7 April 1998); doi: 10.1117/12.304425
Show Author Affiliations
Christopher C. Phillips, Imperial College of Science, Technology, and Medicine (United Kingdom)
Harvey R. Hardaway, Imperial College of Science, Technology, and Medicine (United Kingdom)
Joerg Heber, Imperial College of Science, Technology, and Medicine (United Kingdom)
Peter Moeck, Imperial College of Science, Technology, and Medicine (United States)
Mark J. Pullin, Imperial College of Science, Technology, and Medicine (United Kingdom)
Patrick J.P. Tang, Imperial College of Science, Technology, and Medicine (United Kingdom)
Peter Yuen, Imperial College of Science, Technology, and Medicine (United Kingdom)


Published in SPIE Proceedings Vol. 3279:
Light-Emitting Diodes: Research, Manufacturing, and Applications II
E. Fred Schubert, Editor(s)

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