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Proceedings Paper

InGaN/GaN double-heterostructure LEDs on HVPE GaN-on-sapphire substrates
Author(s): Gary M. Smith; Karim S. Boutros; J. W. Szewczuk; J. S. Flynn; V. M. Phanse; Robert P. Vaudo; Joan Marie Redwing
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Paper Abstract

InGaN double heterostructure light emitting diodes (DH-LEDs) were fabricated on hydride vapor phase epitaxy (HVPE) GaN- on-sapphire substrates. These substrates consisted of a thick HVPE GaN layer grown directly on sapphire and eliminated the need for the growth of a low-temperature buffer layer for GaN epitaxy on sapphire. Homojunction and DH-LEDs have been fabricated with various composition InGaN active regions resulting in strong electroluminescence in the blue, green, and yellow portion of the visible spectra. These devices had turn-on voltages as low as 3.6 volts.

Paper Details

Date Published: 7 April 1998
PDF: 9 pages
Proc. SPIE 3279, Light-Emitting Diodes: Research, Manufacturing, and Applications II, (7 April 1998); doi: 10.1117/12.304424
Show Author Affiliations
Gary M. Smith, Advanced Technology Materials, Inc. (United States)
Karim S. Boutros, Advanced Technology Materials, Inc. (United States)
J. W. Szewczuk, Advanced Technology Materials, Inc. (United States)
J. S. Flynn, Advanced Technology Materials, Inc. (United States)
V. M. Phanse, Advanced Technology Materials, Inc. (United States)
Robert P. Vaudo, Advanced Technology Materials, Inc. (United States)
Joan Marie Redwing, Advanced Technology Materials, Inc. (United States)


Published in SPIE Proceedings Vol. 3279:
Light-Emitting Diodes: Research, Manufacturing, and Applications II
E. Fred Schubert, Editor(s)

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