Share Email Print
cover

Proceedings Paper

Erbium-doped silicon light-emitting devices
Author(s): Thomas D. Chen; Anuradha Agarwal; Laura M. Giovane; James S. Foresi; Ling Liao; Desmond R. Lim; Michael T. Morse; Edward J. Ouellette; Sang H. Ahn; Xiaoman Duan; Jurgen Michel; Lionel C. Kimerling
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Research in erbium-doped silicon (Si:Er) is discussed in light of our effort to improve the luminescence performance of our LEDs and to demonstrate an integration scheme for a microphotonic clock distribution system. Excitation from Si:Er can occur int ow ways: (1) direct excitation of an Er ion by high energy electrons or (2) energy transfer from an injected electron-hole pair to an Er ion in the lattice. In an LED the first excitation mechanism corresponds to operation in reverse bias, and the latter corresponds to operation in forward bias. We have studied the forward bias case, and we use an energy pathway model to describe the excitation and de-excitation processes. The competing, nonradiative processes against excitation and spontaneous emission are discussed. Maximization of light output can be approached in three ways: (1) decreasing the number of nonradiative energy pathways, (2) enhancing the probability of the radiative pathway, or (3) simply increasing the concentration of active Er sties. We report specific methods that address these issues, and we discuss more device structures that can be used as emitters, optical waveguides, and optical switches in a fully integrated microphotonic system.

Paper Details

Date Published: 7 April 1998
PDF: 10 pages
Proc. SPIE 3279, Light-Emitting Diodes: Research, Manufacturing, and Applications II, (7 April 1998); doi: 10.1117/12.304419
Show Author Affiliations
Thomas D. Chen, Massachusetts Institute of Technology (United States)
Anuradha Agarwal, Massachusetts Institute of Technology (United States)
Laura M. Giovane, Massachusetts Institute of Technology (United States)
James S. Foresi, Massachusetts Institute of Technology (United States)
Ling Liao, Massachusetts Institute of Technology (United States)
Desmond R. Lim, Massachusetts Institute of Technology (United States)
Michael T. Morse, Massachusetts Institute of Technology (United States)
Edward J. Ouellette, Massachusetts Institute of Technology (United States)
Sang H. Ahn, Massachusetts Institute of Technology (United States)
Xiaoman Duan, Massachusetts Institute of Technology (United States)
Jurgen Michel, Massachusetts Institute of Technology (United States)
Lionel C. Kimerling, Massachusetts Institute of Technology (United States)


Published in SPIE Proceedings Vol. 3279:
Light-Emitting Diodes: Research, Manufacturing, and Applications II
E. Fred Schubert, Editor(s)

© SPIE. Terms of Use
Back to Top