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Proceedings Paper

LEDs on diamond
Author(s): Wolfgang R. Fahrner; Alexander M. Zaitsev; Alexander A. Melnikov; Andrej V. Denisenko; Reinhart Job; Shuit-Tong Lee
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Paper Abstract

Fabrication of various types of diamond LEDs, their characteristics and the operation mechanisms are reported. All the devices are based on the double injection electroluminescence: charge carriers are injected into intrinsic (i) diamond from adjacent semiconducting p- and n- type areas. The i-area is activated with appropriate optical centers. In the first step a survey of the appropriate optical centers and their spectra is given. The devices are fabricated in the form of either planar or vertical p-i-n or p-i-p structures. It is shown that the electrical and optical properties of the devices are controlled by the type, concentration, and spatial distribution of the deep traps in the i-region. The selection of diamond substrates suitable for the fabrication of LEDs is an essential point and it can be performed with a microwave photoconductivity technique. Several fields of possible application of diamond LEDs are shown: high temperature LEDs, optical sensors of magnetic field, color switches, color indicators of temperature, the high temperature applications being the most promising application area. Perspectives of creation of diamond based laser diodes is shortly discussed.

Paper Details

Date Published: 7 April 1998
PDF: 11 pages
Proc. SPIE 3279, Light-Emitting Diodes: Research, Manufacturing, and Applications II, (7 April 1998); doi: 10.1117/12.304417
Show Author Affiliations
Wolfgang R. Fahrner, Univ. Hagen (Germany)
Alexander M. Zaitsev, Univ. Hagen (Germany)
Alexander A. Melnikov, Belarussian State Univ. (Belarus)
Andrej V. Denisenko, Univ. Hagen (Germany)
Reinhart Job, Univ. Hagen (Germany)
Shuit-Tong Lee, City Univ. of Hong Kong (Hong Kong)

Published in SPIE Proceedings Vol. 3279:
Light-Emitting Diodes: Research, Manufacturing, and Applications II
E. Fred Schubert, Editor(s)

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