Share Email Print
cover

Proceedings Paper

Material characterization for III-nitride-based light emitters
Author(s): Michael Kneissl; David P. Bour; Linda T. Romano; Brent S. Krusor; Matt D. McCluskey; Werner Goetz; Noble M. Johnson
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

A review is presented of the electrical and optical properties of nitride based optoelectronic devices, in particular AlGaInN light emitting diodes and laser diode structures. The III-nitride films and devices were grown by organometallic vapor-phase epitaxy on c- and a-face sapphire substrates. We will discuss the structural properties of GaN. InGaN and AlGaN films, heterostructures and InGaN/GaN quantum wells using x-ray diffraction and cross-sectional transmission electron microscope and describe their electrical and optical properties characterized by Hall effect, photoluminescence, and electroluminescence measurements.

Paper Details

Date Published: 7 April 1998
PDF: 8 pages
Proc. SPIE 3279, Light-Emitting Diodes: Research, Manufacturing, and Applications II, (7 April 1998); doi: 10.1117/12.304411
Show Author Affiliations
Michael Kneissl, Xerox Palo Alto Research Ctr. (United States)
David P. Bour, Xerox Palo Alto Research Ctr. (United States)
Linda T. Romano, Xerox Palo Alto Research Ctr. (United States)
Brent S. Krusor, Xerox Palo Alto Research Ctr. (United States)
Matt D. McCluskey, Xerox Palo Alto Research Ctr. (United States)
Werner Goetz, Hewlett-Packard Optoelectronics Div. (United States)
Noble M. Johnson, Xerox Palo Alto Research Ctr. (United States)


Published in SPIE Proceedings Vol. 3279:
Light-Emitting Diodes: Research, Manufacturing, and Applications II
E. Fred Schubert, Editor(s)

© SPIE. Terms of Use
Back to Top