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Proceedings Paper

Round robin determination of power spectral densities of different Si wafer surfaces
Author(s): Egon Marx; Igor J. Malik; Yale E. Strausser; Thomas C. Bristow; Noel S. Poduje; John C. Stover
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Paper Abstract

Power spectral densities (PSDs) were used to characterize a set of surfaces over a wide range of lateral as well as perpendicular dimensions. Twelve 200-mm-diameter Si wafers were prepared and the surface finished ranged from as-ground wafers to epitaxial wafers. The wafer surfaces were then measured with different methods: atomic force microscopy, angle-resolved light scatter, interferometric and stylus profilometries, and capacitance-based wafer thickness gages. The data were converted into 1D PSDs and the curves were plotted as functions of spatial frequencies. The useful frequency range for each method is indicated and the differences in the calculated PSD values in the overlapping region of two or more methods are discussed. The method used to convert 2D PSDs to 1D ones is presented.

Paper Details

Date Published: 1 April 1998
PDF: 11 pages
Proc. SPIE 3275, Flatness, Roughness, and Discrete Defects Characterization for Computer Disks, Wafers, and Flat Panel Displays II, (1 April 1998); doi: 10.1117/12.304409
Show Author Affiliations
Egon Marx, National Institute of Standards and Technology (United States)
Igor J. Malik, Silicon Genesis Corp. (United States)
Yale E. Strausser, Digital Instruments, Inc. (United States)
Thomas C. Bristow, Chapman Instruments (United States)
Noel S. Poduje, ADE Corp. (United States)
John C. Stover, ADE Optical Systems (United States)


Published in SPIE Proceedings Vol. 3275:
Flatness, Roughness, and Discrete Defects Characterization for Computer Disks, Wafers, and Flat Panel Displays II
John C. Stover, Editor(s)

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