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Proceedings Paper

Novel DUV photoresist modeling by optical thin film decomposition from spectral ellipsometry/reflectometry data
Author(s): Xinhui Niu; Nickhil H. Jakatdar; Costas J. Spanos
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Paper Abstract

New metrology for characterizing the chemically amplified resist is required to meet the stringent demands of DUV lithography. In this paper, we present a systematic methodology to characterize DUV photoresist by decomposing the resist thin-film into different empirical components according to their optical properties. The innovation of this metrology includes three parts: ellipsometry and reflectometry measurement data de-noising; sophisticated dispersion models derived from the Kramers-Kronig relations for optical thin-film component description; and an intelligent simulated annealing algorithm for the optimization computational engine.

Paper Details

Date Published: 1 April 1998
PDF: 8 pages
Proc. SPIE 3275, Flatness, Roughness, and Discrete Defects Characterization for Computer Disks, Wafers, and Flat Panel Displays II, (1 April 1998); doi: 10.1117/12.304403
Show Author Affiliations
Xinhui Niu, Univ. of California/Berkeley (United States)
Nickhil H. Jakatdar, Univ. of California/Berkeley (United States)
Costas J. Spanos, Univ. of California/Berkeley (United States)


Published in SPIE Proceedings Vol. 3275:
Flatness, Roughness, and Discrete Defects Characterization for Computer Disks, Wafers, and Flat Panel Displays II
John C. Stover, Editor(s)

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