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Proceedings Paper

Rapid and accurate determination of transparency, conductivity, etchability, patternability, and manufacturability of ITO films
Author(s): D. Bloom; George G. Li; Kai Zhang; A. Rahim Forouhi; Iris Bloomer
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Paper Abstract

We present a method for the rapid characterization of indium tin oxide (ITO) films. The method determines, from a simple optical measurement, the values of the refractive index (n) and extinction coefficient (k) from 190 to 1100 nm, film thickness, and energy band gap. Also we show that the spectra of the extinction coefficient can be correlated to the film's resistivity. This capability allows the determination of values for the resistivity of ITO films from a very fast and simple optical measurement.

Paper Details

Date Published: 1 April 1998
PDF: 11 pages
Proc. SPIE 3275, Flatness, Roughness, and Discrete Defects Characterization for Computer Disks, Wafers, and Flat Panel Displays II, (1 April 1998); doi: 10.1117/12.304401
Show Author Affiliations
D. Bloom, n&k Technology, Inc. (United States)
George G. Li, n&k Technology, Inc. (United States)
Kai Zhang, EG&G Amorphous Silicon (United States)
A. Rahim Forouhi, n&k Technology, Inc. (United States)
Iris Bloomer, n&k Technology, Inc. (United States)


Published in SPIE Proceedings Vol. 3275:
Flatness, Roughness, and Discrete Defects Characterization for Computer Disks, Wafers, and Flat Panel Displays II
John C. Stover, Editor(s)

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