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Proceedings Paper

Chemically enhanced FIB repair of opaque defects on molybdenum silicide photomasks
Author(s): J. David Casey; Andrew F. Doyle; Diane K. Stewart; David C. Ferranti; Mark L. Raphaelian; John C. Morgan
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Paper Abstract

The characteristics of an ideally repaired opaque defect on a molybdenum silicide (MoSiaObNc) photomask are: (1) the total removal of the MoSiaObNc defect, leaving no residual MoSiaObNc; (2) a smooth, level quartz surface (no over-etch) after the MoSiaObNc is removed; (3) minimal riverbedding of the quartz at the perimeter of the MoSiaObNc defect; and (4) maximum light transmission (%T) at the i-line (365 nm) and DUV (248 nm) lithographic wavelengths. Achieving these ideal repair characteristics is becoming increasingly difficult as the patterned features become smaller, as the lithographic wavelength becomes shorter and as phase shifting mechanisms are implemented. A chemical process has been developed to enhance the FIB (focused ion beam) etching of MoSiaObNc defects. Using this chemical process, a FIB protocol has been developed which enhances the removal of a MoSiaObNc defect while inhibiting the removal of quartz. AFM (atomic force microscopy) indicates that (1) MoSiaObNc is totally removed, (2) the quartz remains smooth and level (no over-etch), and (3) the riverbends are, at this time, 10 - 45 nm; our target is 1 - 15 nm. The MoSiaObNc etch process reduces optical staining due to implanted gallium

Paper Details

Date Published: 12 February 1997
PDF: 11 pages
Proc. SPIE 3236, 17th Annual BACUS Symposium on Photomask Technology and Management, (12 February 1997); doi: 10.1117/12.301221
Show Author Affiliations
J. David Casey, Micrion Corp. (United States)
Andrew F. Doyle, Micrion Corp. (United States)
Diane K. Stewart, Micrion Corp. (United States)
David C. Ferranti, Micrion Corp. (United States)
Mark L. Raphaelian, Micrion Corp. (United States)
John C. Morgan, Micrion Corp. (United States)


Published in SPIE Proceedings Vol. 3236:
17th Annual BACUS Symposium on Photomask Technology and Management
James A. Reynolds; Brian J. Grenon, Editor(s)

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