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Proceedings Paper

Novel alternating phase-shift mask with improved phase accuracy
Author(s): Naoyuki Ishiwata; Takema Kobayashi; Satoru Asai; Isamu Hanyu
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Paper Abstract

We developed an alternating phase shift mask that offers a sufficient phase accuracy for manufacturing sub-0.18 micrometer devices with 248 nm deep-UV lithography. This mask has a Cr/spin-on-glass/quartz structure. Our mask fabrication process utilizes some new techniques which include the use of a SOG shifter with extra thickness, a two step SOG etching, and an additional wet etchign process for phase adjustment. Our process showed a good performance, and a phase controllability of 180 plus or minus 0.7 degrees was achieved. Phase uniformity was less than 3 degrees over a 100 mm square area. It was nearly equal to the uniformity of the SOG thickness. These results prove that the additional etching process is very effective at improving phase accuracy.

Paper Details

Date Published: 12 February 1997
PDF: 7 pages
Proc. SPIE 3236, 17th Annual BACUS Symposium on Photomask Technology and Management, (12 February 1997); doi: 10.1117/12.301196
Show Author Affiliations
Naoyuki Ishiwata, Fujitsu Ltd. (Japan)
Takema Kobayashi, Fujitsu Ltd. (Japan)
Satoru Asai, Fujitsu Ltd. (Japan)
Isamu Hanyu, Fujitsu Ltd. (Japan)


Published in SPIE Proceedings Vol. 3236:
17th Annual BACUS Symposium on Photomask Technology and Management
James A. Reynolds; Brian J. Grenon, Editor(s)

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