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Proceedings Paper

Focused ion beam repair of 193-nm reticle at 0.18-μm design rules
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Paper Abstract

In this paper, the performance of the focused ion beam repair for a 193 nm DUV reticle is studied via wafer level data. The lithography tool used for wafer exposure is 193 nm Microstepper with NA of 0.6. The resist process used is the top surface imaging resist process. In the study, two different repair tools from different manufacturers were used to perform clear intrusion mask defect repairs. We found that in the case of a clear defect repair, due to the combination of defused carbon and gallium staining near the repair region, the effective mask critical dimension (CD) in that region is larger under the 193 nm exposure as compared to the actual repaired mask CD. As a result, a well controlled edge repair, i.e., the repaired patch lined-up well with a line or a contact edge, actually will induce a CD variation in the resist. For example, in the case of a 0.22 micrometer contact (1x), 6 nm (1x) constant CD reduction in resist throughout a range of focus and exposure dose was observed in a good repair as compared to that of a defect-free same size contact. When the repair patch is recessed slightly from the edge, the CD change is reduced as compared to the perfect edge alignment case. Based on this study, we found that it is preferable to recess the repaired patch slightly from the line edge in the case of clear defect repair.

Paper Details

Date Published: 12 February 1997
PDF: 7 pages
Proc. SPIE 3236, 17th Annual BACUS Symposium on Photomask Technology and Management, (12 February 1997); doi: 10.1117/12.301191
Show Author Affiliations
Pei-yang Yan, Intel Corp. (United States)
Roswitha Remling, Intel Corp. (United States)


Published in SPIE Proceedings Vol. 3236:
17th Annual BACUS Symposium on Photomask Technology and Management
James A. Reynolds; Brian J. Grenon, Editor(s)

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