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Proceedings Paper

New electron microscope system for pattern placement metrology
Author(s): Harald Bosse; Wolfgang Haessler-Grohne
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Paper Abstract

Details of a new comparator for pattern placement measurement on masks and wafers are described. The electron-optical metrology system (EOMS) consists of a low energy scanning electron microscope (SEM) with a large specimen chamber and an x-y-stage with 300 mm travel range controlled by laser vacuum interferometry. The design of the instrument is discussed with special emphasis on its metrology components, the laser interferometer and the electron beam probe. The secondary electron image formation of mask and wafer structures and the extraction of the edge position information are described. Recent comparison measurements between the EOMS and a LMS 2020 metrology system are reported. A discussion of the results includes the deviations between both coordinate measurements and the problem of traceability of the length measurement on both comparators. Applications of further measurements on different mask types are presented.

Paper Details

Date Published: 12 February 1997
PDF: 10 pages
Proc. SPIE 3236, 17th Annual BACUS Symposium on Photomask Technology and Management, (12 February 1997); doi: 10.1117/12.301186
Show Author Affiliations
Harald Bosse, Physikalisch-Technische Bundesanstalt (Germany)
Wolfgang Haessler-Grohne, Physikalisch-Technische Bundesanstalt (Germany)

Published in SPIE Proceedings Vol. 3236:
17th Annual BACUS Symposium on Photomask Technology and Management
James A. Reynolds; Brian J. Grenon, Editor(s)

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