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Proceedings Paper

Clear-field reticle defect disposition for advanced sub-half-micron lithography
Author(s): Kent B. Ibsen; John Robert Ilzhoefer; Mark D. Eickhoff
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Paper Abstract

The focus of this work is to provide a methodology to accurately disposition clear field contaminants at the reticle inspection station. A test mask was designed with programmed resist and chrome defects to simulate clear field contamination. Wafers were printed using a variety of 0.50 micrometer/0.35 micrometer/0.25 micrometer lithography processes. We determine printability using I-line and DUV resist under different illumination conditions. We demonstrate that aerial image simulation and defect size are the most practical methodologies to disposition semi-transparent defects. We show aerial image simulation to correlate with printed wafer results for soft defects.

Paper Details

Date Published: 12 February 1997
PDF: 12 pages
Proc. SPIE 3236, 17th Annual BACUS Symposium on Photomask Technology and Management, (12 February 1997); doi: 10.1117/12.301182
Show Author Affiliations
Kent B. Ibsen, Texas Instruments Inc. (United States)
John Robert Ilzhoefer, Texas Instruments Inc. (United States)
Mark D. Eickhoff, KLA-Tencor Corp. (United States)


Published in SPIE Proceedings Vol. 3236:
17th Annual BACUS Symposium on Photomask Technology and Management
James A. Reynolds; Brian J. Grenon, Editor(s)

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