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Proceedings Paper

Advanced millimeter-wave MMIC technology and circuit development
Author(s): Huei Wang
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Paper Abstract

This paper summarizes the results of recent monolithic millimeter-wave circuits (MMICs) developed at TRW using the most advanced MMIC technologies, including GaAs-based power high electron mobility transistor (HEMT) on 2-mil thick substrate, InP-based HEMT and hetero-junction bipolar transistor (HBT) MMICs. For power applications, the 2-mil GaAs MMIC power amplifiers (PAs) demonstrated state-of-the-art output power performance at Ka- (35 GHz) and W-band (94 GHz). For InP HEMT MMIC, a 155-GHz low noise amplifier (LNA) was demonstrated, while for InP HBT MMIC, a 94-GHz fundamental mode voltage controlled oscillator (VCO) exhibited output signal at 94.7 GHz. The 155-GHz LNA and 94-GHz VCO are the highest frequency three-terminal device amplifier and bipolar device fundamental-mode oscillator ever built, respectively. Moreover, the HEMT and HBT devices have been successfully integrated on the same InP substrate and a 24-GHz frequency source consisting an HBT VCO and a HEMT buffer amplifier as well as an HBT-regulated 94-GHz HEMT LNA on a single chip using selective epitaxy technique was demonstrated. These results represent state-of-the-art development status of MMICs and the technologies can be greatly beneficial to the next generation millimeter-wave (MMW) wireless communication systems.

Paper Details

Date Published: 23 January 1998
PDF: 7 pages
Proc. SPIE 3232, Wireless Technologies and Systems: Millimeter-Wave and Optical, (23 January 1998); doi: 10.1117/12.301019
Show Author Affiliations
Huei Wang, TRW Space & Electronics Group (United States)

Published in SPIE Proceedings Vol. 3232:
Wireless Technologies and Systems: Millimeter-Wave and Optical
Paul Christopher; Leland Langston; G. Stephen Mecherle, Editor(s)

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