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Proceedings Paper

LPE growth of ultrathin InGaAsP layer
Author(s): Baoxue Bo; Baoren Zhu; Baoshun Zhang; Xingde Zhang
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Paper Abstract

The LPE growth characteristics of ultra-thin quaternary InGaAsP alloy on GaAs substrate with different sliding speeds and various graphite growth cells has been described. The properties of grown layer are charactered by SEM, photoluminescence spectrum and x-ray diffractometer. Ten to fifty nm InGaAsP layer can be easily obtained and the FWHM of PL spectrum is about 14 mev at 10 K.

Paper Details

Date Published: 20 February 1998
PDF: 3 pages
Proc. SPIE 3175, Third International Conference on Thin Film Physics and Applications, (20 February 1998); doi: 10.1117/12.300722
Show Author Affiliations
Baoxue Bo, Changchun Institute of Optics and Fine Mechanics (China)
Baoren Zhu, Changchun Institute of Optics and Fine Mechanics (China)
Baoshun Zhang, Changchun Institute of Optics and Fine Mechanics (China)
Xingde Zhang, Changchun Institute of Optics and Fine Mechanics (China)


Published in SPIE Proceedings Vol. 3175:
Third International Conference on Thin Film Physics and Applications
Shixun Zhou; Yongling Wang; Yi-Xin Chen; Shuzheng Mao, Editor(s)

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