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Proceedings Paper

Effects of processing conditions on PbGeTe film performance
Author(s): Su-ying Zhang; Chiping Cheng; Jiehua Ling; Bin Fan; Ziying Zou; Zhiyun Wang; Jiajian Zhang; Tian-Shen Shi; Ge-ya Wang
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Paper Abstract

Characters of PbGeTe single layer is likely affected by various factors. The adhesion of PbGeTe single layer and PbGeTe/ZnS multilayer deposited on Si substrate by PVD method is investigated by means of x-ray diffraction. The correlation of layer growing rate and the preferred orientation of Si wafer is studied by the grind angle to measure the thickness method. The particle structure of films on various surface situations is studied by the image analysis. It has been noticed, that the adhesion of PbGeTe single layer is stronger in strength than that of the PbTe single layer, which shows little correlation with the preferred orientation of the substrate. The adhesive strength of the films can be improved by inserting thin layer of Ge or oxide layer. We have found that the layer growing rate varies with the preferred orientation of the substrate, we have also noticed that the particle structure of the films can be affected by the roughness of the substrate and the polishing method. Finally, the refractive index of Pb1-xGexTe(x equals 0.08) single layer was calculated.

Paper Details

Date Published: 20 February 1998
PDF: 4 pages
Proc. SPIE 3175, Third International Conference on Thin Film Physics and Applications, (20 February 1998); doi: 10.1117/12.300721
Show Author Affiliations
Su-ying Zhang, Shanghai Institute of Technical Physics (China)
Chiping Cheng, Shanghai Nicera Sensor Co., Ltd. (China)
Jiehua Ling, Shanghai Nicera Sensor Co., Ltd. (China)
Bin Fan, Shanghai Institute of Technical Physics (China)
Ziying Zou, Shanghai Institute of Testing Technology (China)
Zhiyun Wang, Shanghai Institute of Testing Technology (China)
Jiajian Zhang, Shanghai Institute of Testing Technology (China)
Tian-Shen Shi, Shanghai Institute of Metallurgy (China)
Ge-ya Wang, Shanghai Institute of Metallurgy (China)


Published in SPIE Proceedings Vol. 3175:
Third International Conference on Thin Film Physics and Applications
Shixun Zhou; Yongling Wang; Yi-Xin Chen; Shuzheng Mao, Editor(s)

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