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Proceedings Paper

Effect of buffer layer on the growth of GaN films on sapphire
Author(s): Ke Xu; Rongsheng Qiu; Jun Xu; Zujie Fang; Peizhen Deng; Xiaoshan Wu; Mu Wang; Naiben Ming
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Paper Abstract

The influence of buffer layer on the growth of GaN epilayer was investigated. Five matching orientations were identified when GaN was directly grown on the sapphire (0001) plane. The use of low-temperature buffer layer significantly improved the epitaxial film quality and the surface morphology. The optimal thickness of buffer layer was about 18 nm - 20 nm in the present growth condition.

Paper Details

Date Published: 20 February 1998
PDF: 4 pages
Proc. SPIE 3175, Third International Conference on Thin Film Physics and Applications, (20 February 1998); doi: 10.1117/12.300713
Show Author Affiliations
Ke Xu, Shanghai Institute of Optics and Fine Mechanics (China)
Rongsheng Qiu, Shanghai Institute of Optics and Fine Mechanics (China)
Jun Xu, Shanghai Institute of Optics and Fine Mechanics (China)
Zujie Fang, Shanghai Institute of Optics and Fine Mechanics (China)
Peizhen Deng, Shanghai Institute of Optics and Fine Mechanics (China)
Xiaoshan Wu, Nanjing Univ. (China)
Mu Wang, Nanjing Univ. (China)
Naiben Ming, Nanjing Univ. (China)


Published in SPIE Proceedings Vol. 3175:
Third International Conference on Thin Film Physics and Applications
Shixun Zhou; Yongling Wang; Yi-Xin Chen; Shuzheng Mao, Editor(s)

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