Share Email Print
cover

Proceedings Paper

Quality Hg1-xCdxTe films grown by the modified melt-etch liquid phase epitaxy method
Author(s): Biao Li; Yongsheng Gui; J. Q. Zhu; Junhao Chu
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

Hg1-xCdxTe films were grown by a modified meltetch liquid phase epitaxial (LPE) technique which includes both substrate and epilayer etchback steps. The crystal quality of epilayer has been investigated by means of transmission electron microscope (TEM), scanning electron microscope (SEM), and double crystal x-ray rock curve (XRD). It has been found that adequate meltetch of the substrate at the beginning of LPE provides a fresh and flat surface for epitaxial growth, while epilayer meltetch at the end of LPE may prevent spurious and melt sticking.

Paper Details

Date Published: 20 February 1998
PDF: 5 pages
Proc. SPIE 3175, Third International Conference on Thin Film Physics and Applications, (20 February 1998); doi: 10.1117/12.300702
Show Author Affiliations
Biao Li, Shanghai Institute of Technical Physics (China)
Yongsheng Gui, Shanghai Institute of Technical Physics (China)
J. Q. Zhu, Shanghai Institute of Technical Physics (China)
Junhao Chu, Shanghai Institute of Technical Physics (China)


Published in SPIE Proceedings Vol. 3175:
Third International Conference on Thin Film Physics and Applications
Shixun Zhou; Yongling Wang; Yi-Xin Chen; Shuzheng Mao, Editor(s)

© SPIE. Terms of Use
Back to Top